PART |
Description |
Maker |
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
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VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
|
Hynix Semiconductor
|
THM84000S-80 THM84000L-10 THM84000L-80 THM84000S T |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE 4,194,304 WORDSx8 BIT DYNAMIC RAM MODULE PT 8C 8#16 SKT PLUG 4194304 WORDSx8位动态RAM模块
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V |
4,194,304 x 4 - Bit CMOS FPM Dynamic RAM 4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
HM5116400S-5 HM5116400S-7 HM5116400 HM5116400TS-5 |
4,194,304 - WORD X 4-BIT DYNAMIC RAM
|
HITACHI[Hitachi Semiconductor]
|
HM51W16400LS-5 HM51W16400LTS-5 HM51W16400S-6 HM51W |
4,194,304-word x 4-bit Dynamic RAM
|
HITACHI[Hitachi Semiconductor]
|
TC514100AJ TC514100AP TC514100ASJ TC514100AZ-60 |
4,194,304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
THM94000L-10 THM94000L-80 THM94000S THM94000S-10 T |
4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
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FAIRCHILD[Fairchild Semiconductor]
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